Author/Authors :
V.M. Aroutiounian، نويسنده , , *، نويسنده , , V.M. Arakelyan، نويسنده , , G.E. Shahnazaryan، نويسنده , , H.R. Hovhannisyan a، نويسنده , , Heli Wang، نويسنده , , John A. Turner، نويسنده ,
Abstract :
Ceramic semiconductor photoelectrodes made of Fe2O3 with up to 2 at.% Sn-doping were synthesized. Results of investigations of
their electroconductivity are presented. The ionization energy of donor centers created by tin is determined. The capacitance–voltage
characteristics of the photoelectrodes and the dynamic polarization with chopped light were investigated. The anodic photocurrent onset
potential, the flat band potential and the shallow and deep donor density of these materials were determined. The spectral characteristics
of manufactured photoelectrodes were measured. The threshold photon energies corresponding to the inter-band optical transitions near
the edge of the fundamental absorption of the semiconductor photoelectrode were calculated. The structure of the two-phase interface
was studied using electrochemical impedance spectroscopy.
2007 Elsevier Ltd. All rights reserved
Keywords :
Semiconductor , Photoelectrode , iron oxide , Photocurrent , Impedance
