Abstract :
Cu(In,Ga)Se2-based solar cells buffered with indium sulfide grown by numerous techniques have reached efficiencies comparable to
those achieved by standard devices buffered with (CBD)CdS. The present paper firstly recalls some of the properties of the indium sulfide
single crystal and points out the disagreements concerning the thin films properties inventoried in the literature. Secondly, the influence of
the presence of some ‘‘foreign elements” within the indium sulfide on its properties is presented. It is shown that these ‘‘foreign elements”,
even at low concentration levels, are possibly at the origin of the thin films properties deviations compared to the single crystal. The
impact of these contaminants on the solar cells performance is finally discussed.
2008 Elsevier Ltd. All rights reserved
