• Title of article

    The effect of transient depletion of source gases on the properties of microcrystalline silicon solar cells

  • Author/Authors

    Yongsheng Chen، نويسنده , , Jianhua Wang، نويسنده , , Shi-e Yang، نويسنده , , Jingxiao Lu b، نويسنده , , Jinhua Gu، نويسنده , , Xiaoyong Gao b، نويسنده , , Xuejun Guo، نويسنده , , Chenhai Shen، نويسنده , , Weidong Man، نويسنده ,

  • Issue Information
    ماهنامه با شماره پیاپی سال 2009
  • Pages
    5
  • From page
    1454
  • To page
    1458
  • Abstract
    In is paper, the transient behavior of silane molecules in the initial plasma ignition stage on the properties of microcrystalline silicon films is studied using tailored initial SiH4 density method, and the results are analyzed by Raman spectroscopy and spectroscopic ellipsometry. Compared with standard plasma ignition conditions, tailored initial SiH4 density conditions result higher crystallinity in the interface between substrate and bulk film. Finally, tailored and standard conditions are used in i-layer deposition processes of p-i-n and n-i-p solar cells. It is demonstrated that tailored initial SiH4 density conditions is helpful for the efficiency improvement of n-i-p solar cells and standard plasma ignition conditions for p-i-n solar cells.
  • Keywords
    Thin film , Microcrystalline silicon , Transient depletion , Raman crystallinity
  • Journal title
    Solar Energy
  • Serial Year
    2009
  • Journal title
    Solar Energy
  • Record number

    940135