The n-CdIn2Se4/p-CdTe heterojunction solar cells

The n-CdIn2Se4/p-CdTe heterojunction solar cells have been fabricated by deposition of n-CdIn2Se4 thin films using spray pyrolysis on to p-CdTe. Current density–voltage and capacitance–voltage measurements were performed to determine the electrical properties of the structures. The capacitance–voltage behavior indicates an abrupt interface. The junction quality factor (n), series and shunt resistance (Rs and Rsh), fill factor (FF) and efficiency (g) for the cell have been estimated. The device exhibit maximum fill factor (FF), power conversion efficiency (g) of about 0.55% and 0.67%. 2011 Elsevier Ltd. All rights reserved