Title of article :
Computer simulation of a-Si/c-Si heterojunction solar cell with high conversion efficiency
Author/Authors :
Aqing Chen a، نويسنده , , b، نويسنده , , Kaigui Zhu a، نويسنده , , ?، نويسنده ,
Issue Information :
ماهنامه با شماره پیاپی سال 2012
Pages :
5
From page :
393
To page :
397
Abstract :
The p-type a-Si:H/n-type c-Si (P+ a-Si:H/N+ c-Si) heterojunction was simulated for developing solar cells with high conversion efficiency and low cost. The characteristic of such cells with different work function of transparent conductive oxide (TCO) were calculated. The energy band structure, quantum efficiency and electric field are analyzed in detail to understand the mechanism of the heterojunction cell. Our results show that the a-Si/c-Si heterojunction is hypersensitive to the TCO work function, and the TCO work function should be large enough in order to achieve high conversion efficiency of P+ a-Si:H/N+ c-Si solar cells. With the optimized parameters set, the P+ a- Si:H/N+ c-Si solar cell reaches a high efficiency (g) up to 21.849% (FF: 0.866, VOC: 0.861 V, JSC: 29.32 mA/cm2). 2011 Elsevier Ltd. All rights reserved.
Keywords :
TCO work function , Solar cells , Photovoltaics , a-Si/c-Si heterojunction
Journal title :
Solar Energy
Serial Year :
2012
Journal title :
Solar Energy
Record number :
940884
Link To Document :
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