Author/Authors :
D.-T. Phan a، نويسنده , , R.K. Gupta b، نويسنده , , ?، نويسنده , , G.-S. Chung a، نويسنده , , ?، نويسنده , , A.A. Al-Ghamdi c، نويسنده , ,
Omar A. Al-Hartomy c، نويسنده , , d، نويسنده , , F. El-Tantawy e، نويسنده , , F. Yakuphanoglu، نويسنده , , f، نويسنده ,
Abstract :
Schottky barrier diode based on graphene oxide (GO) with the structure of Al/GO/n-Si/Al was fabricated. The current–voltage characteristics
of the diode were investigated under dark and various light intensity. It was observed that generated photocurrent of the diode
depends on light intensity. Various junction parameters were presented using I–V characteristics. The transient photocurrent measurement
indicated that the Al/GO/n-Si/Al diode was very sensitive to illumination. The photocurrent of the diode increases with increase in
illumination intensity. The capacitance–voltage–frequency (C–V–f) measurements indicated that the capacitance of the diode depends on
voltage and frequency. The capacitance decreases with increasing frequency due to a continuous distribution of the interface states. These
results suggest that the Al/GO/n-Si/Al diode can be utilized as a photosensor.
2012 Elsevier Ltd. All rights reserved.
Keywords :
Schottky diode , Ideality factor , Photoconductor , Barrier height , Graphene oxide
