High-density GaAs integrated circuit manufacturing

The essential items in the development of a high-density high-yield volume manufacturing process for GaAs integrated circuits are presented. The critical issues and decisions for creating the high-density GaAs (HGaAs) enhancement and depletion mode Schottky gate MESFET process are reviewed. The authors describe the process steps, fabrication equipment, and materials used to fabricate self-aligned, refractory gate, enhancement/depletion (E/D) MESFET multilevel metal GaAs integrated circuits. Representative device and circuit results are included.