Title of article :
Effect of CMOS technology scaling on thermal management during burn-in
Author/Authors :
M.، Sachdev, نويسنده , , A.، Keshavarzi, نويسنده , , O.، Semenov, نويسنده , , A.، Vassighi, نويسنده , , C.F.، Hawkins, نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
-685
From page :
686
To page :
0
Abstract :
Burn-in is a quality improvement procedure challenged by the high leakage currents that are rapidly increasing with IC technology scaling. These currents are expected to increase even more under the new burn-in environments leading to higher junction temperatures, possible thermal runaway, and yield loss during burn-in. The authors estimate the increase in junction temperature with technology scaling. Their research shows that under normal operating conditions, the junction temperature is increasing 1.45*/generation. The increase in junction temperature under the burn-in condition was found to be exponential. The range of optimal burn-in voltage and temperature is reduced significantly with technology scaling.
Keywords :
Gene regulation , male reproductive tract , spermatid , testis , spermatogenesis
Journal title :
IEEE Transactions on Semiconductor Manufacturing
Serial Year :
2003
Journal title :
IEEE Transactions on Semiconductor Manufacturing
Record number :
95545
Link To Document :
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