Title of article
Electrical characteristics and reliability of UV transparent Si/sub 3/N/sub 4/ metal-insulator-metal (MIM) capacitors
Author/Authors
R.J.، Bolam, نويسنده , , V.، Ramachandran, نويسنده , , D.، Coolbaugh, نويسنده , , K.M.، Watson, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-940
From page
941
To page
0
Abstract
In this paper, we discuss the electrical characteristics and reliability of UV transparent Si/sub 3/N/sub 4/ metalinsulator-metal (MIM) capacitors. We examine film thicknesses in the range of 55 to 25 nm with capacitance densities from 1.2 ff/(mu)m/sup 2/ to 2.8 ff/(mu)m/sup 2/, respectively, for single MIM capacitors. A new approach for projecting the dielectric reliability of these films extends the limits of maximum operating voltage. Accounting for temperature acceleration and area scaling, the projected lifetimes can be met for a wide range of operating conditions.
Keywords
boundary-layer equation , Turbulent flow , Laminar flow , iterative method , noniterative method , nonlinear parabolic partial-differential equation
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
Serial Year
2003
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
Record number
95682
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