Title of article
Effect of sulfur passivation and polyimide capping on InGaAs-InP PIN photodetectors
Author/Authors
N.، Dasgupta, نويسنده , , A.، Dasgupta, نويسنده , , M.R.، Ravi, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-531
From page
532
To page
0
Abstract
It is shown in this work that sulfur passivation followed by a deionized water rinse reduces the dark current of InGaAs-InP PIN photodetectors significantly. This reduction in dark current is shown to be due to reduced recombination at the exposed mesa surface. Detectors with polyimide capping after sulfur passivation showed no degradation in characteristics with time.
Keywords
Industrial organization , Biotechnology R&D
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
Serial Year
2003
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
Record number
95791
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