Author/Authors :
J.K.، Sheu, نويسنده , , S.J.، Chang, نويسنده , , C.H.، Kuo, نويسنده , , Y.K.، Su, نويسنده , , L.W.، Wu, نويسنده , , J.M.، Tsai, نويسنده , , J.F.، Chen, نويسنده ,
Abstract :
The electrical properties of Si-doped n/sup +/-In/sub 0.23/Ga/sub 0.77/N/GaN SPS structure were investigated and compared with conventional Mg-doped GaN contact layer. Temperature dependent Hall measurement showed that such a SPS structure exhibits a high sheet electron concentration. It was found that we could reduce the 20 mA LED forward voltage from 3.78 V to 2.94 V and also reduce the series resistance of the LED from 41 (omega) to 10 (omega) by introducing such an n/sup +/-InGaN/GaN SPS top contact. It was also found that we could improve the LED lifetime by such a SPS structure.
