Title of article
MOSFET degradation kinetics and its simulation
Author/Authors
K.، Hess, نويسنده , , O.، Penzin, نويسنده , , A.، Haggag, نويسنده , , W.، McMahon, نويسنده , , E.، Lyumkis, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-1444
From page
1445
To page
0
Abstract
In this work, the time-dependence of Si/SiO/sub 2/ interface trap formation is considered by solving an improved set of Si-H defect kinetics equations that take into account interface disorder and the Si-H bond activation energy evolution as the bonds are broken. This model is applied to the simulation of metal oxide semiconductor field effect transistor (MOSFET) high field and hot carrier degradation, and then verified with various experimental data. An estimation of the potential barrier of the Si/SiO/sub 2/ interface is given.
Keywords
Cretan Mediterranean diet , homocysteine , folate , Ischaemic heart disease
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
Serial Year
2003
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
Record number
95796
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