The evaluation of performance parameters of MOSFETs with alternative gate dielectrics

This brief discusses a benchmarking methodology for the evaluation of performance parameters (g/sub mmax/ and I/sub dsat/) of MOSFETs with alternative gate dielectrics. It is shown that assuming ideal scaling for either or with electrical oxide thickness (g/sub mmax/ or I/sub dsat/ (proportional to) T/sub oxinv//sup -(alpha)/ with (alpha) = 1) instead of using experimental scaling trends for a baseline dielectric results in unrealistically pessimistic conclusions about the performance of alternative gate dielectrics. Factors In addition to mobility reduction which can contribute to sub-ideal scaling ((alpha) < 1) for any dielectric are discussed. This bench marking methodology for performance evaluation is demonstrated for oxynitride gate dielectric films with equivalent oxide thickness (EOT) approaching 11 (angstrom).