Title of article :
High efficiency, low offset voltage InGaP/GaAs power heterostructure-emitter bipolar transistors with advanced thermal management
Author/Authors :
E.S.، Yang, نويسنده , , Yan، Bei-Ping نويسنده , , Yang، Yue-Fei نويسنده , , Wang، Xiao-Qin نويسنده , , Hsu، Chung-Chi نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Abstract :
High efficiency, low offset voltage InGaP/GaAs power heterostructure-emitter bipolar transistors (HEBTs) have been demonstrated. The large signal performance of the HEBTs is characterized. Output power of 0.25 W with power added efficiency (PAE) of 63.5% at 1.9 GHz has been achieved from a 26-finger HEBT with total emitter area of 873.6 (mu)m/sup 2/. Output power of 1.0 W with PAE of 63% has been obtained from the composition of four above-mentioned power cells at the optimum conditions of impedance matching. The thermal performance of HEBT is presented and the results show better thermal management than conventional HBT. The experimental results demonstrate good power performance and capability of HEBTs.
Keywords :
device scaling , channel initiated secondary electron (CHISEL) , Monte Carlo simulation , channel hot electron (CHE) , programming efficiency , hot carriers , Flash electrically erasable programmable read-only memories (EEPROMs)
Journal title :
IEEE TRANSACTIONS ON ELECTRON DEVICES
Journal title :
IEEE TRANSACTIONS ON ELECTRON DEVICES
