Title of article
High brightness InGaN green LEDs with an ITO on n/sup ++/-SPS upper contact
Author/Authors
C.S.، Chang, نويسنده , , J.K.، Sheu, نويسنده , , S.J.، Chang, نويسنده , , C.H.، Kuo, نويسنده , , Y.K.، Su, نويسنده , , Y.C.، Lin, نويسنده , , W.C.، Lai, نويسنده , , J.M.، Tsai, نويسنده , , S.C.، Shei, نويسنده , , H.M.، Lo, نويسنده , , J.C.، Ke, نويسنده , , Y.P.، Hsu, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-2207
From page
2208
To page
0
Abstract
Indium tin oxide (ITO) (260 nm) and Ni (5 nm)/Au (10 nm) films were deposited onto glass substrates, p-GaN layers, n/sup +/-InGaN/GaN shortperiod-superlattice (SPS), n/sup ++/-SPS and nitride-based green light-emitting diodes (LEDs). It was found that ITO could provide us an extremely high transparency (i.e., 95% at 520 nm). It was also found that the 1.03*10/sup -3/ (omega)cm/sup 2/ specific contact resistance of ITO on n/sup ++/-SPS was reasonably small. Although the forward voltage of the LED with ITO on n/sup ++/-SPS upper contacts was slightly higher than that of the LED with Ni/Au on n/sup ++/-SPS upper contacts, the 20 mA output power and external quantum efficiency of the former could reach 4.98 mW and 8.2%, respectively, which were much larger than the values observed from the latter. The reliability of ITO on n/sup ++/-SPS upper contacts was also found to be reasonably good.
Keywords
channel initiated secondary electron (CHISEL) , device scaling , hot carriers , programming efficiency , Monte Carlo simulation , Flash electrically erasable programmable read-only memories (EEPROMs) , channel hot electron (CHE)
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
Serial Year
2003
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
Record number
95923
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