Measurements of InGaP electron ionization coefficient using InGaP-GaAs-InGaP double HBTs

Electron impact ionization coefficients ((alpha)) in In/sub 0.52/Ga/sub 0.48/P have been extracted based on the measurements of electron multiplication factor in npn InGaP-GaAs-InGaP double heterojunction bipolar transistors (HBTs). The electron ionization coefficient of InGaP determined in this brief extends the previously reported data in low electric field by two orders of magnitude down to 1 cm/sup -1/ with the electric field as low as 330 kV/cm.