Title of article
Influence of temperature and optical confinement on threshold current of an InGaAs/InP quantum wire laser
Author/Authors
D.M.، Gvozdic, نويسنده , , A.، Schlachetzki, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-731
From page
732
To page
0
Abstract
In this paper, we investigate the influence of the temperature on gain and threshold current density of a V-groove quantum wire InGaAs/InP laser. The calculation shows that room-temperature operation can be achieved if the optical confinement is large enough (0.26% in our case), while its slight improvement above this limit (around 0.4%) can provide a significant reduction of the threshold current (more than 70%) and an improved temperature stability of the laser.
Keywords
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Journal title
IEEE Journal of Selected Topics in Quantum Electronics
Serial Year
2003
Journal title
IEEE Journal of Selected Topics in Quantum Electronics
Record number
97110
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