Simple frequency-domain analysis of MOSFET-including nonquasi-static effect

We propose a harmonic balance technique for the frequency-domain analysis of the metal-oxide-semiconductor field-effect transistor (MOSFET) operation. The MOSFET model in our approach is based on the charge-sheet and the nonquasi-static MOSFET models in the channel region with a harmonic balance technique applied to the channel charges. It is shown that the proposed method renders a computationally efficient tool to analyze the harmonic distortion occurrence in the MOSFET device due to the nonlinear response of the channel charges.