Atomic layer epitaxy growth of doped zinc oxide thin films from organometals

An atomic layer epitaxy process for growing Al-doped ZnO thin films is presented. Organometallic precursors of zinc and aluminum were used to react with water at substrate temperatures of 120–350°C. Growth rate varied from 0.5 to 2.5 Å/cycle, depending on precursors and substrate temperatures used. With optimum doping, sheet resistances of 10 Ω/□ with 1 μm thick films were obtained.