Selective MLE growth of GaAs and surface treatment for ideal static induction transistor (ISIT) application

This paper reports the effects of low temperature surface treatment on the GaAs regrown interface quality prepared by photo-stimulated molecular layer epitaxy. The regrown diode characteristics are investigated as functions of treatment temperature, exposing AsH3 pressure and duration. Optimized surface treatment gives a good regrown interface even at low temperatures of ∽ 480°C compared with conventional high temperature treatment at ∽ 600°C. The surface treatment mechanism is also discussed in combination with the results of X-ray photo-emission spectroscopy (XPS) and quadrupole mass analysis (QMS). Low temperature surface treatment is successfully applied to the ISIT fabrication with a channel length of 1800-100 Å having a few monolayer p+ barrier layer thickness, which shows the DC transconductance gm as high as 1500 mS/mm with good reproducibility.