Abstract :
The present work deals with methods which allow one to obtain GaP layers with flat surfaces on a Si substrate under a relatively low value of V/III ratio. The successful growth of a GaP layer with a perfect surface was accomplished by the improvement of the reactor design and by the optimization of the thermal treatment conditions prior to the deposition process. The optimum thermal annealing and growth conditions for metalorganic chemical vapor deposition with a horizontal reactor are described in detail. Furthermore, the mechanisms of formation of the two-dimensional structure of a GaP layer on Si are clarified within this work.
