Migration and related buried epitaxy using digital epitaxial growth conditions

Selective or buried epitaxy was demonstrated on grooved or mesa substrates by the digital epitaxy by which fine thickness control of ultra-thin GaInAs or InP at atomic scale has been achieved in the wider space ranges of epitaxial layers. The migration of the group III source plays an important role both in maskless selective epitaxy and in maskless buried epitaxy. The migration length of TMIn and related materials as group III atoms landing on the InP (100) substrate were estimated experimentally to be 0.40 μm at a growth temperature of Tg = 500°C.