Abstract :
Extremely smooth (011)-oriented facets were fabricated by selective growth using chemical beam epitaxy (CBE) on both sides of ridges formed by reactive ion etching (RIE) on a (100)-oriented InP substrate. The verticality of the sidewalls was improved by selective CBE regrowth. In addition, parallel striae on the etched sidewalls were completely smoothed out after InP regrowth. This sidewall epitaxy technique is promising to obtain highly reflective facet mirrors of short cavity laser diodes.
