Title of article
Fabrication of smooth facets of InP by selective sidewall epitaxy using CBE
Author/Authors
M. Gotoda، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1994
Pages
5
From page
80
To page
84
Abstract
Extremely smooth (011)-oriented facets were fabricated by selective growth using chemical beam epitaxy (CBE) on both sides of ridges formed by reactive ion etching (RIE) on a (100)-oriented InP substrate. The verticality of the sidewalls was improved by selective CBE regrowth. In addition, parallel striae on the etched sidewalls were completely smoothed out after InP regrowth. This sidewall epitaxy technique is promising to obtain highly reflective facet mirrors of short cavity laser diodes.
Journal title
Applied Surface Science
Serial Year
1994
Journal title
Applied Surface Science
Record number
989782
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