Title of article
Growth of In2S3 thin films by atomic layer epitaxy
Author/Authors
T. Asikainen، نويسنده , , M. Ritala، نويسنده , , M. Leskel?، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1994
Pages
4
From page
122
To page
125
Abstract
In2S3 films were deposited by ALE using InCl3 and H2S as precursors. The films were characterized by means of XRD, RBS, SEM and by optical and electrical measurements. The highest growth rate obtained was 1.4 Å/cycle at 300°C. The films were polycrystalline β-In2S3 having a band gap of 2.3 eV.
Journal title
Applied Surface Science
Serial Year
1994
Journal title
Applied Surface Science
Record number
989789
Link To Document