Abstract :
Active roles of Column-V precursors in atomic layer epitaxy (ALE) of GaAs and AlAs are demonstrated using an amino-As, i.e. tris-dimethylamino-arsenic (TDMAAs). The temperature range for ALE was drastically modified by the selection of TDMAAs in place of arsine. The main factor for this modification was studied with temperature programmed desorption measurements on Ga and Al surfaces during ALE. It is shown that amine species transferred from As surfaces to Ga or Al surfaces during the alternate supplies of precursors and their desorption properties have profound effects on the ALE growth mechanism.
