Substitution of surface-adsorbed As atoms to P atoms in atomic layer epitaxy

A systematic study on the substitution reaction of surface-adsorbed As atoms to P atoms was performed using atomic layer epitaxy (ALE). The reactionʹs dependence on P4 exposure time, on P4 partial pressure and on growth temperature was investigated quantitatively. A mechanism consisting of two kinds of substitution is proposed. Investigation showed that the substitution reaction rate is proportional to the fraction of superficial As atoms and P4 partial pressure. The activation energy of the substitution reaction is 81.8 kJ / mol.