Title of article
Atomic-scale modification of the AlCl3-adsorbed Si(111)-7 × 7 surface
Author/Authors
Takaharu Takiguchi، نويسنده , , Katsuhiro Uesugi، نويسنده , , Masamichi Yoshimura، نويسنده , , Takafumi Yao، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1994
Pages
6
From page
428
To page
433
Abstract
Atomic-scale modification of the AlCl3-adsorbed Si(111)-7 × 7 surface is demonstrated through an electric-field induced reaction of adsorbed molecules with the use of scanning tunneling microscopy (STM). An Al2Cl6 molecule dissociatively adsorbs onto a Si(111)-7 × 7 surface at room temperature, resulting in the adsorption of Cl atoms and AlClx fragments. Atomic-scale modification around the adsorption sites is induced by applying a voltage pulse to the surface. A single Cl atom is extracted for both sample bias polarities, and the extraction probability for a positive bias is higher than that for a negative bias. It is also found that the extraction probability increases with gap conductance. Manipulation and dissociation of the adsorbed molecules are also demonstrated.
Journal title
Applied Surface Science
Serial Year
1994
Journal title
Applied Surface Science
Record number
989836
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