• Title of article

    Atomic-scale modification of the AlCl3-adsorbed Si(111)-7 × 7 surface

  • Author/Authors

    Takaharu Takiguchi، نويسنده , , Katsuhiro Uesugi، نويسنده , , Masamichi Yoshimura، نويسنده , , Takafumi Yao، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1994
  • Pages
    6
  • From page
    428
  • To page
    433
  • Abstract
    Atomic-scale modification of the AlCl3-adsorbed Si(111)-7 × 7 surface is demonstrated through an electric-field induced reaction of adsorbed molecules with the use of scanning tunneling microscopy (STM). An Al2Cl6 molecule dissociatively adsorbs onto a Si(111)-7 × 7 surface at room temperature, resulting in the adsorption of Cl atoms and AlClx fragments. Atomic-scale modification around the adsorption sites is induced by applying a voltage pulse to the surface. A single Cl atom is extracted for both sample bias polarities, and the extraction probability for a positive bias is higher than that for a negative bias. It is also found that the extraction probability increases with gap conductance. Manipulation and dissociation of the adsorbed molecules are also demonstrated.
  • Journal title
    Applied Surface Science
  • Serial Year
    1994
  • Journal title
    Applied Surface Science
  • Record number

    989836