Atomic layer epitaxy in the growth of complex thin film structures for electroluminescent applications

Thin film electroluminescent (TFEL) devices are formed by a stack of thin films and are complicated to process. The multicolor devices which are close to commercialization are much more complex than the monochrome ones. The problems in the preparation and improving of TFEL devices are reviewed and the possibilities of the atomic layer epitaxy technique in solving these problems are discussed. Special emphasis is placed on the precursor properties.