Title of article
Growth of extra-thin ordered aluminum films on Si(111) surface
Author/Authors
E.A. Khramtsova، نويسنده , , A.V. Zotov، نويسنده , , A.A. Saranin، نويسنده , , S.V. Ryzhkov، نويسنده , , A.B. Chub، نويسنده , , V.G. Lifshits، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1994
Pages
7
From page
576
To page
582
Abstract
The conditions of surface phase formation have been studied by means of Auger electron spectroscopy and low-energy electron diffraction for a specified amount of Al deposited on clean Si(111)7 × 7 surface kept at constant temperature, from room temperature up to 700°C. The formation phase diagram for the Al/Si(111) system is presented. The regularities of epitaxial Al(111) growth on top Si(111)—Al surface phases are discussed.
Journal title
Applied Surface Science
Serial Year
1994
Journal title
Applied Surface Science
Record number
989861
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