Author/Authors :
E.A. Khramtsova، نويسنده , ,
A.V. Zotov، نويسنده , ,
A.A. Saranin، نويسنده , ,
S.V. Ryzhkov، نويسنده , ,
A.B. Chub، نويسنده , ,
V.G. Lifshits، نويسنده ,
Abstract :
The conditions of surface phase formation have been studied by means of Auger electron spectroscopy and low-energy electron diffraction for a specified amount of Al deposited on clean Si(111)7 × 7 surface kept at constant temperature, from room temperature up to 700°C. The formation phase diagram for the Al/Si(111) system is presented. The regularities of epitaxial Al(111) growth on top Si(111)—Al surface phases are discussed.
