Carrier transport in heavily doped polycrystalline silicon layers after annealing by a scanning laser beam

Results on recombinational parameters and low-temperature (4–350 K) carrier-transport measurements in heavily doped laser-beam-annealed poly-Si layers are shown. The initial films were deposited by the LPCVD method on oxidized (110) mono-Si substrates. After laser-beam recrystallization the structure of the films became columnar-like with grain sizes of about 30–100 μm. In this case the low-temperature dependencies of conductivity and I-V characteristics can be described on the basis of the percolation model of Shklovski-Efros. The results obtained have allowed the construction of a qualitative model of carrier transport in poly-Si layers in a wide temperature range.