Multilayered Ni/Hf and solid-state amorphization studied using the slow positron beam technique

A monoenergetic slow positron beam was used to profile thin Ni/Hf multilayers. We measured the changes in the S-parameter of the Doppler broadened positron annihilation radiation through the solid-state amorphization. It is shown that a high density of vacancy-type defects in Hf layers strongly induces the fast diffusion of Ni atoms.