Photo-luminescence of pulsed excimer laser annealed Sb-implanted CdTe

Epitaxial thin films of CdTe on InSb have been implanted with Sb at doses from 1012 to 1014 cm−2 at 100 keV. Implantation at 77 K results in a visible deterioration in the photoluminescence (PL) intensity, which can be restored to some extent for doses of 1012 and 1013 cm−2 by annealing with a pulsed excimer laser (XeCl, 308 nm) in Ar (4 bar) at laser fluences as low as 80 mJ cm−2. Laser fluences in excess of 120 mJ cm−2 cause significant increases in both the total intensity and the intensities of the excitonic features relative to other emissions. Material implanted to 1014 cm−2 shows very little enhancement of the excitonic features even at 200 mJ cm−2. Films implanted at room temperature show much less disruption of the PL, indicating a high degree of self-annealing, but no additional transitions associated with Sb.