Title of article :
MBE-STM study of the Ga-rich 4 × 2 phase of the GaAs(001) surface
Author/Authors :
Qikun Xue، نويسنده , , T. Sakurai and T. Hashizume ، نويسنده , , J.M. Zhou، نويسنده , , T. Sakata، نويسنده , , T. Sakurai، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1995
Pages :
4
From page :
364
To page :
367
Abstract :
We studied the atomic structure of the GaAs(001) 4 × 2 and 4 × 6 phases by scanning tunneling microscopy (STM) and determined that both the 4 × 2c(8 × 2) and 4 × 6 phases are Ga-terminated. The 4 × 2c(8 × 2) structure can be described better by Biegelsen et al.ʹs bilayer Ga dimer model than by Skalaʹs As model.
Journal title :
Applied Surface Science
Serial Year :
1995
Journal title :
Applied Surface Science
Record number :
990119
Link To Document :
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