Author/Authors :
Tomihiro Hashizume، نويسنده , , Q.K. Xue، نويسنده , , A. Ichimiya، نويسنده , , T. Sakurai، نويسنده ,
Abstract :
The systematic study of the FI-STM images and reflection high-energy electron diffraction of the GaAs(001)2 × 4 surface showed that the GaAs(001)-(2 × 4)-α, β and γ phases all have the same unit cell in the topmost layer consisting of two As dimers and two dimer vacancies.
