Quantitative correction of backscattering in Auger electron spectroscopy of thin films

We present a theoretical model to compute easily the effect of backscattering in Auger spectroscopy on layered materials. This quantitative treatment can be applied for a primary energy in the range 2–5 keV and includes a semi-empirical expression for the backscattering factors in the form r = 1 + g(U)f(Z), which allows the correction of differential scattering, even for a complex stratified sample. The general expression is equivalent to the usual formula when applied to simple systems such as homogeneous thin films and alloys. For a complex system, an estimation of the Auger electron flux is obtained, in the form of simple integrals, which can be evaluated numerically and used to interpret the experimental data.