• Title of article

    Atomic hydrogen-assisted ALE of germanium

  • Author/Authors

    Satoshi Sugahara، نويسنده , , Masaru Kadoshima، نويسنده , , Takuya Kitamura، نويسنده , , Sigeru Imai، نويسنده , , Masakiyo Matsumura، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1995
  • Pages
    8
  • From page
    349
  • To page
    356
  • Abstract
    Atomic layer epitaxy of germanium has been demonstrated successfully by alternating exposures of atomic hydrogen, which acts as a reactant for extracting hydrocarbon from the surface, and of dimethylgermane as a self-limiting molecular precursor. The ideal growth rate of one monolayer per cycle has been achieved with a wide ALE temperature window between 420°C and 528°C.
  • Journal title
    Applied Surface Science
  • Serial Year
    1995
  • Journal title
    Applied Surface Science
  • Record number

    990222

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=990222