Author/Authors :
S. Ravesi، نويسنده , , F. La Via، نويسنده , , V. Raineri، نويسنده , , C. Spinella and R. Reitano ، نويسنده ,
Abstract :
The thermal stability of thin cobalt silicide films obtained by ion beam assisted deposition of Co on polycrystalline Si has been studied. A large improvement has been obtained depositing Co at 470°C with an Ar+ beam energy of 1000 eV: no increase of the sheet resistance was observed until 1000°C. the improvement has been connected to the stability of the CoSi2/polysilicon interface.
