Precursor development for the chemical vapor deposition of aluminium, copper and palladium

The concept of “molecular engineering” has been employed to systematically influence the physical and chemical properties of metalorganic compounds with the aim of using them as precursors in CVD processes. As a result of our studies the compounds bis(isobutyl)(η2-methylcyclopentadienyl)aluminium(III); tert-butylisonitrile(η-cyclopentadienyl)copper(I), and 1-methylallyl(hexafluoroacetylacetonato)-palladium(II) are presented as suitable precursors for CVD. CVD experiments carried out with these compounds yielded homogenous metal films without detectable carbon contamination at temperatures between 200 and 350°C.