Abstract :
The novel field of ternary amorphous metallic thin films made of an early transition metal and a combination of B, C, N, Si, and P is briefly reviewed. Ternary alloys composed of a transition metal, silicon, and nitrogen applied as thin-film diffusion barriers for Cu contacts to Si devices are emphasized. The synthesis of these films by reactive sputtering is described, their structural and electrical properties are discussed, and the reason for their unique performance as diffusion barriers for copper are explained. Shallow junction diodes provided with a 10 nm thick barrier layer of this type and a copper overlayer can withstand 650°C for 30 min in vaccum without significant degradation of the reverse current. A table lists all diode tests published so far in the open literature.
