Deposition of titanium nitride/tungsten layers for application in vertically integrated circuits technology

Chemical vapor deposition (CVD) processes were developed meeting the stringent requirements for the metallization of inter-chip-vias (ICV) in the vertical integration of chips technology. The metallization is done by highly conformal deposition of a titanium nitride glue layer in vias with extremely high aspect ratios as 7 : 1 and void-free filling of the vias with tungsten.