Author/Authors :
I.A. Bogonin، نويسنده , , A.L. Karuzskii، نويسنده , , N.N. Melnik، نويسنده , , Yu.A. Mityagin، نويسنده , , V.N. Murzin، نويسنده , , A.A. Orlikovsky، نويسنده , , A.V. Perestoronin، نويسنده , , P.P. Sverbil، نويسنده , , S.D. Tkachenko، نويسنده , , A.V. Tsikunov، نويسنده , , N.A. Volchkov، نويسنده , , B.G. Zhurkin، نويسنده ,
Abstract :
A method of diamond-like coating deposition on silicon and quartz, that can be compatible with growth processes of semiconductor and superconductor films, is described. These carbon thin films were prepared by pulsed laser sputtering of a graphite target in a high-vacuum (∼ 10−6 Torr) environment. Investigations by a variety of spectroscopic techniques demonstrate that the films have a high density (∼ 2.9 g/cm3) close to the density of diamond, a high ratio of sp3 to sp2 bonding (0.750.25), and IR transparency. The films were hard, adhesive to the substrate and had a high resistivity. It was found that hydrogen is incorporated into the films up to ∼ 10 at% due to reactions of sputtered carbon particles with residual hydrocarbons in the high-vacuum environment.
