XPS studies on SiC thin layers formed by ion implantation with a metal vapor vacuum arc ion source

We have performed XPS studies on SiC thin layers formed by high-dose C+ implantation into Si with a metal vapor vacuum arc ion source. Composition depth profiles of the implanted SiC samples and the change in the chemical state of the silicon and carbon atoms with respect to composition and depth have been obtained. An unexpected double peak feature in the depth profile of the width of the Si 2p signal has been observed and the results are discussed in terms of the damage properties of the implanted SiC layers.