Author/Authors :
Ian W.C. Lee، نويسنده , , T.M. Hsu، نويسنده , , J.-I. Chyi، نويسنده , , G.S. Lee، نويسنده , , W.-H. Li، نويسنده , , K.C. Lee، نويسنده ,
Abstract :
Low temperature GaAs has been grown by molecular beam epitaxy at substrate temperatures between 200°C–400°C, and subsequently annealed in the growth chamber at 600°C. These samples have been characterized by X-ray and Raman spectroscopy. From the rocking curve of a high resolution double crystal X-ray diffraction system we observed that GaAs layers grown at low temperatures were highly strained and contained about 1% excess arsenic. These results have been compared with an analysis of LO and TO frequency splitting in the Raman spectra.
