Author/Authors :
K. Mochizuki، نويسنده , , H. Oguri، نويسنده , , T. Kyotani، نويسنده , , M. Isshiki، نويسنده ,
Abstract :
ZnSexTe1 − x epitaxial films were grown by the VPE method and the composition x was successfully controlled by regulating the pressure ratio (PSe2PTe2) over the substrate. The films with homogeneous composition were grown on the substrate with a tilt angle of 60°. From photoluminescence (PL) spectra, it was clarified that high quality films are obtainable by this method without incorporating impurities.
