Title of article
Mirror polishing of InP wafer surfaces with NaOCl-citric acid
Author/Authors
Y. Morisawa، نويسنده , , I. Kikuma، نويسنده , , N. Takayama، نويسنده , , M. Takeuchi، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1996
Pages
4
From page
147
To page
150
Abstract
This paper describes new polishing solutions using NaOCl and citric acid for polishing InP wafers. The NaOCl solution and citric acid in water are separately supplied and mixed on a polishing pad. The liberated chlorine in the mixed solution etches the InP wafer surfaces. Mirror polished InP wafers with good surface roughness are prepared with an optimized solution; Rmax is 0.8 nm and Ra is 0.1 nm. No damage is observed on the mirror-finish surfaces of the InP wafers.
Journal title
Applied Surface Science
Serial Year
1996
Journal title
Applied Surface Science
Record number
990331
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