Author/Authors :
Y. Morisawa، نويسنده , , I. Kikuma، نويسنده , , N. Takayama، نويسنده , , M. Takeuchi، نويسنده ,
Abstract :
This paper describes new polishing solutions using NaOCl and citric acid for polishing InP wafers. The NaOCl solution and citric acid in water are separately supplied and mixed on a polishing pad. The liberated chlorine in the mixed solution etches the InP wafer surfaces. Mirror polished InP wafers with good surface roughness are prepared with an optimized solution; Rmax is 0.8 nm and Ra is 0.1 nm. No damage is observed on the mirror-finish surfaces of the InP wafers.
