Structural and electrical properties of excimer laser deposited PLZT thin films

Pb1−xLax(ZryTi1−y)1−x/4O3 (PLZT) perovskite (x = 0.05, y = 0.07) thin films on Si substrates have been successfully synthesized by pulsed laser deposition. Effects of substrate temperature, substrate structure and a buffer layer of SrTiO3 (STO) on the structure of PLZT films were investigated. The (110)-oriented PLZT films were prepared on the (110)-oriented STO buffer layer. The (110)-oriented PLT films without Zr4+ ions showed marvelous electrical behavior, their dielectric constant and charge storage capacitance are k = 1297 (100 kHz) and Qc = 5.4 μC/cm2 (50 kV/cm), respectively.