Title of article :
The influence of residual O2 gas in vacuum on the structural and luminescent properties of ZnF2:Mn thin films
Author/Authors :
Yoichiro Nakanishi، نويسنده , , Shinya Naito، نويسنده , , Takato Nakamura، نويسنده , , Yoshinori Hatanaka، نويسنده , , Goro Shimaoka، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1996
Pages :
4
From page :
400
To page :
403
Abstract :
The relationship between the structural and photoluminescent properties and the preparation conditions of ZnF2:Mn thin films deposited by electron beam evaporation has been investigated. It was found that a part of the ZnF2:Mn film deposited at a substrate temperature higher than 300°C under about 10−6 Torr is oxidized to ZnO by residual O2 gas on the substrate. The formation of ZnO was confirmed by X-ray diffraction, spectral transmission, AES analysis and photoluminescence. This oxidation process could not be observed even at 500°C if the pressure is lowered to 10−8 Torr. It was also found that the crystallinity was improved with increasing substrate temperature.
Journal title :
Applied Surface Science
Serial Year :
1996
Journal title :
Applied Surface Science
Record number :
990376
Link To Document :
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