Title of article
Light emission from the porous boron δ-doped Si superlattice
Author/Authors
Ting-Chang Chang، نويسنده , , Wen-Kuan Yeh، نويسنده , , Ming-Yuh Hsu، نويسنده , , Chun-Yen Chang، نويسنده , , Chien-Ping Lee، نويسنده , , Tz-Guei Jung، نويسنده , , Wen-Chung Tsai، نويسنده , , Guo-Wei Huang، نويسنده , , Yu-Jane Mei، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1996
Pages
4
From page
571
To page
574
Abstract
We report the first study on the porous boron δ-doped Si superlattice. Visible photoluminescence (PL) was observed with multiple peaks from the porous boron δ-doped Si superlattice at room temperature. In the electroluminescence (EL) experiment, a bright yellow light emission was observed from the porous boron δ-doped Si superlattices. However, a weak red light emission was also observed from the conventional porous Si which is anodized at the same etching condition. As a result, the structure of the porous boron δ-doped Si superlattice has the ability of controlling the quantum size in porous Si and enhancing the light intensity from porous Si.
Journal title
Applied Surface Science
Serial Year
1996
Journal title
Applied Surface Science
Record number
990409
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