Author/Authors :
Ting-Chang Chang، نويسنده , , Wen-Kuan Yeh، نويسنده , , Ming-Yuh Hsu، نويسنده , , Chun-Yen Chang، نويسنده , , Chien-Ping Lee، نويسنده , , Tz-Guei Jung، نويسنده , , Wen-Chung Tsai، نويسنده , , Guo-Wei Huang، نويسنده , , Yu-Jane Mei، نويسنده ,
Abstract :
We report the first study on the porous boron δ-doped Si superlattice. Visible photoluminescence (PL) was observed with multiple peaks from the porous boron δ-doped Si superlattice at room temperature. In the electroluminescence (EL) experiment, a bright yellow light emission was observed from the porous boron δ-doped Si superlattices. However, a weak red light emission was also observed from the conventional porous Si which is anodized at the same etching condition. As a result, the structure of the porous boron δ-doped Si superlattice has the ability of controlling the quantum size in porous Si and enhancing the light intensity from porous Si.
