Title of article :
Field emission properties of AuSi eutectic
Author/Authors :
V.V. Zhirnov ، نويسنده , , L. Bormatova، نويسنده , , E.I. Givargizov، نويسنده , , P.S Plekhanov، نويسنده , , U.T. Son، نويسنده , , A.V. Galdetsky، نويسنده , , B.A. Belyavsky، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1996
Pages :
4
From page :
144
To page :
147
Abstract :
AuSi eutectic on the top of silicon whiskers demonstrated good emissivity at relatively low voltage. Both single tip emitters and arrays of tips were investigated. A maximum emission current of 300 μA was obtained from single-tip AuSi eutectic emitters. Two possible emission mechanisms were considered: emission from edge-like protrusions on the surface or hot electron emission from AuSi microjunctions.
Journal title :
Applied Surface Science
Serial Year :
1996
Journal title :
Applied Surface Science
Record number :
990489
Link To Document :
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