Author/Authors :
D. Dimova-Malinovska، نويسنده , , M. Tzolov، نويسنده , , N. Malinowski، نويسنده , , Ts. Marinova، نويسنده , , V. Krastev، نويسنده ,
Abstract :
Light emitting silicon has been prepared by Ar laser (514.5 nm) induced stain etching and Nd:YAG impulse (532 nm) laser irradiation in air. Photoluminescence (PL), IR and XPS spectra have been studied. The intensity and position of the PL depend on the power and the duration of laser beam treatment during the etching. Correlation between the PL and chemical bonding is discussed.
